N-Channel MOSFET
Description
MDP2N60/MDF2N60 N-channel MOSFET 600V
MDP2N60/MDF2N60
N-Channel MOSFET 600V, 2.
0A, 4.
5Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 2.
0A RDS(ON) ≤ 4.
5Ω @ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
TO-220 MDP Series
TO-220F MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt
(3) (1)
Symbol VDSS VGSS TC=25 C TC=100 C
o o
MDP2N60 600 ±30 2.
0 1.
2 8.
0 53.
9 0.
43 5.
39 4.
5 115
MDF2N60
Unit V V
ID IDM
2.
0* 1.
2* 8.
0* 22.
7 0.
18
A A 24 W W/ oC mJ V/ns mJ
o
TC=25oC Derate above 25 oC
PD EAR dv/dt EAS TJ, Tstg
Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
-55~150
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
MDP2N60 62.
5 2.
32
MDF2N60 62.
5 5.
5
Unit
o
C/W
Feb.
2010 Version 1.
1
1
MagnaChip Semiconductor Ltd.
MDP2N60/MDF2N60 N-channel MOSFET 600V
Ordering Information
Part Number MDP2N60TH MDF2N60TH Temp.
Range -55~150oC -55~150 C
o
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen Free Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise T...
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