NPN Silicon Power Transistor
Description
Aug 2006
PTP5027
PTP5027
NPN Silicon Power Transistor 3.
0 Amperes / 50 Watts High Voltage and High Reliability
TO-220 1.
Base 2.
Collector 3.
Emitter
1
- High Speed Switching - Wide SOA
2
3
Absolute Maximum Ratings
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 1100 800 7 3 10 1.
5 50 150 -55~150 UNIT V V V A A A W ℃ ℃
Electrical Characteristics
CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO ICEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT ton tstg tf Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IE=0 IC=1.
5A, IB1=-IB2=0.
3A L=2mH, Clamped VCB=800V,IE=0 VEB=5V,IC=0 VCE=5V,IC=0.
2A VCE=5V,IC=1A IC=1.
5A,IB=0.
3A IC=1.
5A,IB=0.
3A
VCB=10V,IE=0, f=0.
1MHz
Min 1100 800 7 800
Typ.
Max
Unit V V V V
10 10 10 8 40 2 1.
5 60 15 0.
5 3.
0 0.
3
μA μA
V V pF MHz μS μS μS
VCE=10V,IC=0.
2A Vcc=400V, Ic=5A IB1=-2.
5A, IB2=2A RL=200Ω
Note :
Aug 2006
hFE1 Classification
N :10 ~ 20,
R : 15 ~ 30,
O : 20 ~ 40
Power Device REV.
A0
PTP5027
Typical Characteristics
Figure 1.
Static Characteristic
Figure 2.
DC current Gain
Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Saturation
Figure 4.
Base-Emitter On Voltage
Figure 5.
Switching Time
Figure 6.
Safe Operating Area
Aug 2006
Power Device REV.
A0
PTP5027
Typical Characteristics ( Continued )
Figure 7.
Reverse Bias Operating Area
Figure 8.
Power Derating
Aug 2006
Power Device REV.
...
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