Transistor
Description
SMD Type
Low VCE(sat) Transistor 2SD2098
SOT-89
+0.
1 4.
50-0.
1 +0.
1 1.
80-0.
1
Transistors
Unit: mm
+0.
1 1.
50-0.
1
Features
Excellent DC current gain characteristics.
+0.
1 4.
00-0.
1
Low VCE(sat).
1
NPN silicon transistor.
+0.
1 0.
48-0.
1
2
3
+0.
1 0.
80-0.
1 +0.
1 0.
53-0.
1 +0.
1 0.
44-0.
1
+0.
1 2.
50-0.
1
2.
60
+0.
1 -0.
1
+0.
1 3.
00-0.
1
0.
40
1.
Base 2.
Collector 3.
Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 5 0.
5 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=5V 0.
3 120 150 30 Testconditons Min 50 20 6 0.
5 0.
5 1.
0 390 MHz pF Typ Max Unit V V V ìA ìA V
VCE(sat) IC=4 A, IB=0.
1A hFE fT Cob VCE=2V, IC=0.
5A VCE=6V, IE= -50mA, f=100MHz VCB=20V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE Q 120 270 DJ R 180 390
+0.
1 -0.
1
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