N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
Green Product
SP632S
Ver 1.
1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
10A
R DS(ON) (m Ω) Max
16 @ VGS=10V 24 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
PIN 1
5
6
7
8
DFN 5x6
1
2
3
4
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C ID Drain Current-Continuous
ad
Limit 60 ±20 42 26 10 8 35
c
Units V V A A A A A mJ W W W °C
TC=100°C TA=25°C TA=70°C
IDM EAS PD
-Pulsed
d
Single Pulse Avalanche Energy Maximum Power Dissipation
a
156 TC=25°C TA=25°C TA=70°C 54 3.
1 2 -55 to 150
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient R JC Thermal Resistance, Junction-to-Case
Details are subject to change without notice.
40 2.
3
°C/W °C/W
Jan,24,2014
1
www.
samhop.
com.
tw
SP632S
Ver 1.
1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=5A VGS=4.
5V , ID=4A VDS=10V , ID=5A
1
1.
5 13 18 15
3 16 24
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
b
VDS=25V,VGS=0V f=1.
0MHz
2280 144 117
VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=5A,VGS=10V VDS=30V,ID=5A,VGS=4.
5V VDS=30V,ID=5A, VGS=1...
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