DatasheetsPDF.com

SP8608

SamHop Microelectronics

Dual N-Channel Enhancement Mode Field Effect Transistor


SP8608
SP8608

PDF File SP8608 PDF File


Description
Green Product SP8608 Ver 2.
3 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 9.
5 @ VGS=4.
5V 9.
8 @ VGS=4.
0V 20V 12A 10.
5 @ VGS=3.
8V 12.
5 @ VGS=3.
1V 15.
0 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 12 9.
6 72 1.
32 0.
84 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 95 °C/W Details are subject to change without notice.
Jul,22,2014 1 www.
samhop.
com.
tw SP8608 Ver 2.
3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=16V , VGS=0V 20 1 ±1 V uA uA VGS= ±8V , VDS=0V VDS=VGS , ID=1mA VGS=4.
5V , ID=3A VGS=4.
0V , ID=3A VGS=3.
8V , ID=3A VGS=3.
1V , ID=3A VGS=2.
5V , ID=3A VDS=5V , ID=6A 0.
5 6.
5 7.
0 7.
5 8.
0 9.
5 1.
0 8.
0 8.
5 9.
0 10.
5 12.
0 28 772 253 229 1.
5 9.
5 9.
8 10.
5 12.
5 15.
0 V m ohm m ohm m ohm m ohm m ohm S pF pF pF RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=10V,VGS=0V f=1.
0MHz VDD=16V ID=6A VGS=4.
5V RGEN= 6 o...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)