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HBC848

Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HBC848
HBC848

PDF File HBC848 PDF File

Description
HI-SINCERITY MICROELECTRONICS CORP.
HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6843 Issued Date : 1994.
07.
29 Revised Date : 2008.
01.
30 Page No.
: 1/4 Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature.
.
-55 to +150 °C Junction Temperature.
.
+150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C).
225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.
.
...


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