1-Mbit (64 K x 16) F-RAM Memory
Description
FM28V102A
1-Mbit (64 K × 16) F-RAM Memory
2-Mbit (128 K × 16) F-RAM Memory
Features
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Low-voltage operation: VDD = 2.
0 V to 3.
6 V Industrial temperature: –40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant
1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30-ns cycle time ❐ Advanced high-reliability ferroelectric process SRAM compatible ❐ Industry-standard 64 K × 16 SRAM pinout ❐ 60-ns access time, 90-ns cycle time Advanced features ❐ Software-programmable block write-protect Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 120 A (typ) ❐ Sleep mode current 3 A (typ)
Functional Overview
The FM28V102A is a 64 K × 16 nonvolatile memory that reads and writes similar to a standard SRAM.
A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed.
It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the F-RAM superior to other types of memory.
The FM28V102A operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system.
Read cycles may be triggered by CE or simply by changing the address and write cycles may be triggered by CE or WE.
The F-RAM memory is nonvolatile due to its unique ferroelectric memory process.
These features make the FM28V102A ideal for ...
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