Silicon N-Channel Power MOSFET
Description
HAT2064R
Silicon N Channel Power MOS FET Power Switching
ADE-208-930G (Z) 8th.
Edition May 2000 Features
• • • • Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.
0 mΩ typ (at VGS = 10V)
Outline
SOP-8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT2064R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch
Note2 Note2 Note1
Ratings 30 ± 20 16 128 16 2.
5 50 150 – 55 to + 150
Unit V V A A A W ° C/W °C °C
θ ch-a Tch Tstg
1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s
2
HAT2064R
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ± 20 — — 1.
0 — — 18 — — — — — — — — — — — — Typ — — — — — 5.
0 7.
0 30 2200 600 330 40 6 8 20 35 60 16 0.
9 50 Max — — ± 10 1 2.
5 6.
3 10 — — — — — — — — — — — 1.
17 — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, V DS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 8 A, VGS = 10 V Note3 I D = 8 A, VGS = 4.
5 V Note3 I D = 8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V I D = 16 A VGS = 10 V, ID = 8 A VDD ≈ 10 V RL = 1.
25 Ω Rg = 4.
7 Ω IF = 16 A, VGS = 0 Note3 IF = 16 A, VGS = 0 diF/ dt = 50 A/ µs
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on...
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