N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP3R604GH
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
40V 3.
7mΩ 75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G
□
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
4 4
Rating 40 +20 125 75 75 300 104 -55 to 150 -55 to 150
Units V V A A A A W ℃ ℃
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 1.
2 62.
5
Units ℃/W ℃/W 1 200903191
Data & specifications subject to change without notice
AP3R604GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.
5V, ID=30A
Min.
40 1 -
Typ.
100 28 5.
3 16 10 80 36 105 600 175 1.
5
Max.
Units 3.
7 5.
6 3 10 +100 45 2.
3 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=40V, VGS=0V VGS=+20V, VDS=0V ID=40A VDS=32V VGS=4.
5V VDS=20V ID=40A RG=3.
3Ω,VGS=10V RD=0.
5Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz
Gate-Sou...
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