N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP60N03GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 13.
5mΩ 55A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60N03GJ) is available for low-profile applications.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 30 ±20 55 35 215 62.
5 0.
5 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200602051-1/4
AP60N03GH/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
30 1 -
Typ.
0.
037
Max.
Units 13.
5 20 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=28A VGS=4.
5V, ID=22A VDS=VGS, ID=250uA VDS=10V, ID=28A
11.
5 18 30 22.
4 2.
7 14 7.
4 81 24 18 950 440 145
Gate Threshold Voltage Forward Transconductance
Drain-Source...
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