N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP92T03GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4mΩ 80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP92T03GP) are available for low-profile applications.
G D S
TO-263(S)
G
D
TO-220(P)
S Units V V A A A W W/℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
Rating 30 +20 80 50 320 89 0.
71 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.
4 40 62
Units ℃/W ℃/W ℃/W 1 201303053
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP92T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.
5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Drain-Source Leakage Current
o
Min.
30 0.
5 Min.
-
Typ.
100 45 6 26 12 63 40 7 930 770 Typ.
39 42
Max.
Units 4 5.
2 2 1 250 +100 72 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Gate Threshold Voltage
VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=2...
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