N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP02N90H/J
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
900V 7.
2£[ 1.
9A
Description
S
G D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for lowprofile applications.
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 900 ±30 1.
9 1.
2 6 62.
5 0.
5
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
36 1.
9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
0 110 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200418063-1/4
AP02N90H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions
Min.
900 2 -
Typ.
0.
8 2 12 2.
5 4.
7 10 5 18 9 630 40 4
Max.
Units 7.
2 4 10 100 ±100 20 1000 V V/¢J £[ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25¢J , ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=125oC)
RDS(ON) VGS(th) gfs IDSS IGSS Qg Q...
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