N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics
Description
Advanced Power Electronics Corp.
AP2332GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Small Package Outline Surface Mount Device RoHS-compliant, Halogen-free G S D
BV DSS R DS(ON) ID
600V 300Ω 27mA
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2332GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in medium current applications such as load switches.
D
S SOT-23 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 600 + 20 27 21 100 0.
5 -55 to 150 -55 to 150
Units V V mA mA mA W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 250 Unit °C/W
Ordering Information
AP2332GN-HF-3TR RoHS-compliant, halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
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USA www.
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
AP2332GN-HF-3
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=16mA VDS=VGS, ID=250uA VDS=10V, ID=16mA VDS=480V, VGS=0V VGS=±20V, VDS=0V ID=0.
1A VDS=200V VGS=10V VDS=300V ID=10mA RG=3.
3Ω, VGS=10V RD=30kΩ VGS=0V VDS=25V f=1.
0MHz
Min.
600 2 1.
8 8.
8 7 5
Typ.
28...
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