SCHOTTKY BARRIER DIODE
Description
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YG812S04R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.
)
Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average forward current Non-repetitive forward surge current Operating junction temperature Storage temperature Symbols VRSM VRRM Viso IFAV IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Terminals-to-case, AC.
1min 50Hz Square wave duty =1/2 Tc = 124˚C Sine wave, 10ms 1shot Ratings 48 45 1500 10 120 150 -40 to +150
FUJI Diode
Units V V V A A ˚C ˚C
Electrical characteristics
Item Forward voltage Reverse current Thermal resistance
(at Ta=25˚C unless otherwise specified.
)
Symbols VF IR Rth(j-c) IF =10 A VR =VRRM Junction to case Conditions Maximum 0.
6 2.
0 2.
5 Units V mA ˚C/W
Mechanical characteristics
Item Mounting torque Approximate mass Conditions Recommended torque Maximum 0.
3 to 0.
5 1.
7 Units N•m g
1
YG812S04R
Outline Drawings [mm]
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FUJI Diode
YG812S04
YG812S04
2
YG812S04R
Forward Characteristic (typ.
)
100
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Reverse Characteristic (typ.
)
FUJI Diode
10
2
Tj=150°C
Tj=125°C
10 10
1
Tj=100°C Tj=150°C Tj=125°C Tj=100°C Tj=25°C (mA) Reverse Current
10
0
Forward Current (A)
10
-1
1
IF
IR
Tj=25°C
10
-2
0.
1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2
10
-3
0
10
20
30
40
50
VF Forward Voltage (V) Forward Power Dissipation (max.
)
14
VR Reverse Voltage (V)
Reverse Power Dissipation (max.
)
360°
12
10
360°
DC
I0 λ
VR α
(W)
8
Square wave λ=60° Square wave λ=120° Sine wave λ=180°
Reverse Power Dissipation
Forward Power Dissipation
(W)
10
8
6
α =180°
6
Square wave λ=180° DC
4
WF
PR
2
4
2
Per 1element
0 0 2 4 6 8 10 0 0 5 10 15 20 25 30 35 40 45
IO
Average Forward Current
(A)
VR
Reverse Voltage
(V)
3
YG812S04R
Current Derating (Io-Tc) (max.
)
160
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Junction Capacitance Characteristic (typ.
)
10000
FUJI Diode
150
140
DC (°C)...
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