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TK10A80E

Toshiba Semiconductor

Silicon N-Channel MOSFET


Description
TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Sou...



Toshiba Semiconductor

TK10A80E

PDF File TK10A80E PDF File


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