Silicon P-Channel MOSFET
Description
SSM6E01TU
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
· · P-channel MOSFET and N-channel MOSFET incorporated into one package.
Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation Unit: mm
Q1 Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating -12 ±12 -1.
0 -2.
0 Unit V V A
Q2 Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating 20 10 0.
05 0.
2 Unit V V A
JEDEC JEITA TOSHIBA Weight: 7.
0 mg (typ.
)
― ― ―
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 0.
5 150 -55~150 Unit W °C °C
2
Note 1: Mounted on an FR4 board (25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu pad: 645 mm ) Note 2: Pulse width limited by maximum channel temperature.
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
Q1
KTA
1 2 3 1
Q2
2
3
1
2003-01-16
SSM6E01TU
Handling Precaution
This product has a MOS structure and is sensitive to electrostatic discharge.
When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity.
Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area.
When using this device, please take heat dissipation into consideration.
2
2003-01-16
SSM6E01TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics Forward voltage (diode) Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward trans...
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