P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AP9565BGH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 52mΩ -17A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9565BGJ) is available for low-profile applications.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -40 ±20 -17 -11 -60 25 0.
2 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 5.
0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200828071-1/4
AP9565BGH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-8A VGS=-4.
5V, ID=-6A
Min.
-40 -1 -
Typ.
7.
7 7.
8 1.
7 4.
8 8 17 22 23 530 110 75
Max.
Units 52 90 -3 -10 -25 ±100 12.
5 850 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=-250uA VDS=-10V, ID=-8A VDS=-40V, VGS=0V VD...
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