Silicon N-Channel MOSFET - Toshiba Semiconductor
Description
TK16G60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16G60W5
1.
Applications
• Switching Voltage Regulators
2.
Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.
) Low drain-source on-resistance: RDS(ON) = 0.
18 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.
5 V (VDS = 10 V, ID = 0.
79 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
D2PAK
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 15.
8 63.
2 130 194 4.
0 15.
8 63.
2 150 -55 to 150 W mJ A A Unit V
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production
1
2013-10 2014-02-25 Rev.
2.
0
TK16G60W5
5.
Thermal Characteristics
Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 0.
962 Unit /W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 21.
2 mH, RG = 25 Ω, IAR = 4.
0 A
Note:
This transistor is sensitive to electrostatic discharge and should be handl...
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