MOSFETs
Description
TJ60S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 t...
Similar Datasheet
- TJ60S04M3L MOSFETs - Toshiba Semiconductor