IGBTs
Description
Trench Gate, High Speed, IGBTs
For PDP Applications
IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1
VCES = ICP = VCE(sat) ≤
90N33TC
330V 360A 1.80V
90N33TCD1
Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC < 150°C,...
Similar Datasheet
- IXGA90N33TC IGBTs - IXYS Corporation