MOSFETs
Description
TPCL4202
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCL4202
1.
Applications
• Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications The product(s) described herein should not be used for any other application.
Note:
2.
Features
(1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 28 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VSS = 10 V, IS = 200 µA) Common drain
3.
Packaging and Internal Circuit
1: Source 1 2: Gate 1 3: Gate 2 4: Source 2
ChipLGA
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Source-source voltage Gate-source voltage Source current (DC) Source current (pulsed) Power dissipation Power dissipation Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2), (Note 4) (Note 3), (Note 4) Symbol VSSS VGSS IS ISP PD PD Tch Tstg Rating 30 ±12 6 24 0.
50 1.
65 150 -55 to 150 W W A Unit V
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production
1
2009-04 2014-02-17 Rev.
3.
0
TPCL4202
5.
Thermal Characteristics
Characteristics Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (t = 10 s) (t = 10 s) (Note 2), (Note 4) (Note 3), (Note 4) Symbol Rth(ch-a) Rth(ch-a) Max 250 75.
8 Unit /W /W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a gl...
Similar Datasheet
