IPP10N03L
Description
IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max.
SMD version ID
P- TO263 -3-2
30 8.
9 73
P- TO220 -3-1
V mΩ A
• Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters
Type IPP10N03L IPB10N03L
Package
Ordering Code
Marking 10N03L 10N03L
P- TO220 -3-1 Q67042-S4040 P- TO263 -3-2 Q67040-S4346
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25°C
Value 73 63
Unit A
ID
Pulsed drain current
TC=25°C
I D puls EAS EAR dv/dt VGS Ptot T j , Tstg
292 25 10 6 ±20 107 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=30A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-01-17
IPP10N03L IPB10N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min.
footprint @ 6 cm2 cooling area 3)
Symbol min.
RthJC RthJA -
Values typ.
0.
9 max.
1.
4 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, I D=1mA
Symbol min.
V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.
2
Values typ.
1.
6 max.
2
Unit
V
Gate threshold voltage, VGS = VDS
ID=60µA
Zero gate voltage drain current
V DS=30V, V GS=0V, Tj=25°C V DS=30V, V GS=0V, Tj=175°C
µA 0.
01 10 1 1 100 100 nA mΩ 9.
9 9.
5 6.
8 6.
5 13.
4 13.
1 9.
2 8.
9
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.
5V, ID=36A V GS=4.
5V, ID=36A, SMD version
Drain-source on-state resistance4)
V GS=10V, ID=36A V GS=10V, ID=36A, SMD versio...
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