LASER DIODE
Description
A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6342EP
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet
R08DS0050EJ0100 Rev.1.00 Jan 19, 2012
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