Trench IGBT
Description
SEMiX202GB066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • UL recognised file no.
E63532
Typical Applications*
• Matrix Converter • Resonant Inverter • Current Source Inverter
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• For short circuit: Soft RGoff recommended
• Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 200 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 3.
2 mA
VGE = 0 V VCE = 600 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V.
.
.
+ 15 V
Tj = 25 °C
VCC = 300 V IC = 200 A VGE = ±15 V RG on = 4.
2 RG off = 4.
2
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
per IGBT
Values
600 274 207 200 400 -20 .
.
.
20
6
-40 .
.
.
175
291 214 200 400 1000 -40 .
.
.
175
600 -40 .
.
.
125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max.
Unit
1.
45
1.
85
V
1.
7
2.
1
V
0.
9
1
V
0.
85
0.
9
V
2.
8
4.
3
m
4.
3
6.
0
m
5
5.
8
6.
5
V
0.
15
0.
45 mA
mA
12.
3
nF
0.
77
nF
0.
37
nF
1600
nC
1.
00
65
ns
80
ns
6
mJ
545
ns
95
ns
8
mJ
0.
21 K/W
GB
© by SEMIKRON
Rev.
1 – 13.
01.
2012
1
SEMiX202GB066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB066HDs
Features
• Homogeneous Si • Trench = ...
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