PNP Transistor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF870; BF872 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09
Philips Semiconductors
Product specification
PNP high-voltage transistors
FEATURES • Low feedback capacitance.
handbook, halfpage
BF870; BF872
APPLICATIONS • For use in class-B video output stages of colour television receivers.
2
DESCRIPTION PNP transistors in a TO-202 plastic package.
NPN complements: BF869 and BF871.
PINNING PIN 1 2 3 emitter collector, connected to mounting base base Fig.
1 DESCRIPTION
1 2 3
3 1
MBH792
Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF870 BF872 VCEO collector-emitter voltage BF870 BF872 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 25 °C IC = −25 mA; VCE = −20 V; Tj = 25 °C IC = ic = 0; VCE = −30 V; f = 1MHz IC = −10 mA; VCE = −10 V; f = 100 MHz open base − − − − 50 − 60 −250 −300 −100 5 − 2.
2 − pF MHz V V mA W open emitter − − −250 −300 V V CONDITIONS MIN.
MAX.
UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BF870 BF872 VCEO collector-emitter voltage BF870 BF872 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 25 °C open collector open base − − − − − − − − PARAMETER collector-base voltage open emitter − − CONDITIONS
BF870; BF872
MIN.
MAX.
−250 −300 −250 −300 −5 −50 −100 −50 1.
6 5 +150 150 +150
UNIT V V V V V nA mA mA W W °C °C °C
−65 − −65
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from...
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