N-Ch Enhancement Mode Power MOSFET
Description
SSD50N10
Elektronische Bauelemente 50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
Drain
M
A B
C D
GE
K J
HF
MARKING
50N10
Date Code
N O P
REF.
Gate
PACKAGE INFORMATION
Package TO-252 MPQ 2.
5K Leader Size 13 inch
Source
A B C D E F G H
Millimeter Min.
Max.
6.
35 6.
80 5.
20 5.
50 2.
15 2.
40 0.
45 0.
58 6.
8 7.
5 2.
40 3.
0 5.
40 6.
25 0.
64 1.
20
REF.
J K M N O P
Millimeter Min.
Max.
2.
30 REF.
0.
64 0.
90 0.
50 1.
1 0.
9 1.
65 0 0.
15 0.
43 0.
58
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V 1 Pulsed Drain Current
2
Symbol
VDS VGS TC=25°C TC=100°C ID IDM TC=25°C TA=70°C PD EAS IAS TJ, TSTG
Rating
100 ±20 50 28 100 90 2 98 41 -55~150
Unit
V V A A A W mJ A °C
Total Power Dissipation 4 Single Pulse Avalanche Energy 3 Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case
1
Thermal Resistance Rating
RθJA RθJC 62.
5 1.
4 °C / W °C / W
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Any changes of specification will not be informed individually.
19-Oct-2012 Rev.
A
Page 1 of 4
SSD50N10
Elektronische Bauelemente 50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter Symbol Min.
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current TJ=25°C TJ=55°C Static Drain-Source On-...
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