P-Channel MOSFET
Description
SMG2361P
Elektronische Bauelemente -3.
4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
A
L
3
SC-59
3
Top View
C B
1 2 2
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board space.
Fast switching speed.
High performance trench technology.
1
K
E D
F
G
Millimeter Min.
Max.
2.
70 3.
10 2.
25 3.
00 1.
30 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50
H
Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15
J
REF.
A B C D E F
REF.
G H J K L
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package SC-59 MPQ 3K Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA=25° C TA=70° C IDM IS PD ID
Rating
-60 ±20 -3.
4
Unit
V V A
-2.
6 -20 -1.
6 1.
3 W 0.
8 TJ, TSTG -55~150 ° C A A
Continuous Source Current (Diode Conduction) Power Dissipation
1
TA=25° C TA=70° C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t ≦ 10 sec Steady-State
RθJA
100 166
° C/W
Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev.
A
Page 1 of 4
SMG2361P
Elektronische Bauelemente -3.
4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter Symbol Min Static
Gate-Threshold Voltage Gate-Body Leakag...
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