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NE6500496

California Eastern

L&S BAND MEDIUM POWER GaAs MESFET


NE6500496
NE6500496

PDF File NE6500496 PDF File


Description
L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W °C °C RATINGS 15 -18 -12 4.
5 25 25 175 -65 to +175 FEATURES • HIGH OUTPUT POWER: 4 W • HIGH LINEAR GAIN: 11.
5 dB • HIGH EFFICIENCY (PAE): 45% • INDUSTRY STANDARD PACKAGING DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices.
The device has no internal matching and can be used from UHF frequencies up to 3.
0 GHz.
The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.
The NE6500496 Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 96 5.
2±0.
3 1.
0±0.
1 4.
0 MIN BOTH LEADS Gate φ2.
2±0.
2 4.
0±0.
1 Source Drain 0.
6±0.
1 5.
2±0.
3 11.
0±0.
15 15.
0±0.
3 5.
0 MAX 1.
7±0.
15 6.
0±0.
2 1.
2 4.
3±0.
2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V °C dB Ω TYP MAX 10 10 130 3.
0 200 +.
06 0.
1 -.
02 0.
2 MAX ELECTRICAL CHARACTERISTICS (TC PART NUMBER SYMBOLS CHARACTERISTICS Power Out at Fixed Input Power Linear Gain Power Added Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance = 25°C) NE6500496 UNITS dBm dB % A A V mS °C/W 1.
0 -3.
5 MIN 35.
5 11.
0 TYP 36.
0 11.
5 45 0.
8 2.
3 -2.
0 1300 5.
0 6.
0 3.
5 -0.
5 VDS = 2.
5 V; VGS = 0 V VDS = 2.
5 V; IDS = 15 mA VDS = 2.
5 V; IDS = 1 mA Channel to Case MAX TEST CONDITIONS PIN = 26.
0 dBm VDS = 10 V; IDSQ = 400 mA f = 2.
3 GHz; RG = 200 Ω Functional Characteristics POUT GL ηAD...



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