HEXFET Power MOSFET
Description
PD - 91364B
IRFR/U3910
HEXFET® Power MOSFET
Ultra Low On-Resistance l Surface Mount (IRFR3910) l Straight Lead (IRFU3910) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description
l
D
VDSS = 100V
G S
RDS(on) = 0.
115Ω ID = 16A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D -P A K T O -252 A A I-P A K T O -25 1A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
16 12 60 79 0.
53 ± 20 150 9.
0 7.
9 5.
0 -55 to + 175 300 (1.
6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.
9 50 110
Units
°C/W
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1
5/11/98
IRFR/U3910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficien...
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