2SA1320
Description
2SA1320
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
High Voltage Switching Applications Color TV Chroma Output Applications
• • • High voltage: VCEO = −250 V Low Cre: 1.
8 pF (max) Complementary to 2SC3333 Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −250 −250 −5 −50 −100 −20 0.
6 150 −55~150 Unit V V V mA mA W °C °C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Weight: 0.
21 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Reverse transfer capacitance Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE fT Cre Test Condition VCB = −200 V, IE = 0 VEB = −5 V, IC = 0 IC = −1 mA, IB = 0 VCE = −20 V, IC = −25 mA IC = −10 mA, IB = −1 mA VCE = −20 V, IC = −25 mA VCE = −10 V, IC = −10 mA VCB = −30 V, IE = 0, f = 1 MHz Min ⎯ ⎯ −250 50 ⎯ ⎯ 60 ⎯ Typ.
⎯ ⎯ ⎯ ⎯ ⎯ −0.
75 80 ⎯ Max −0.
1 −0.
1 ⎯ ⎯ −1.
5 ⎯ ⎯ 1.
8 V V MHz pF Unit μA μA V
1
2007-11-01
2SA1320
2
2007-11-01
2SA1320
3
2007-11-01
2SA1320
RESTRICTIONS ON PRODUCT USE
• Tosh...
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