Power MOSFET
Description
MOSFET – Power, Single, N-Channel
40 V, 0.
67 mW, 370 A
NTMFS5C404NL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
370
A
260
167 W
67
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
52
A
37
3.
2
W
1.
3
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C + 175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 38 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
184
A
EAS
907 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.
75 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DATA SHEET www.
onsemi.
com
V(BR)DSS 40 V
RDS(ON) MAX 0.
67 mW @ 10 V 1.
0 mW @ 4.
5 V
ID MAX 370 A
D (5)
G (4)
S (1,2,3) N−CHANNEL MOSFET
MARKING DIAGRAM
D
DF...
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