P-Channel MOSFET
Description
BSS84AKM
SO T8 83
50 V, 230 mA P-channel Trench MOSFET
Rev.
1 — 23 May 2011 Product data sheet
1.
Product profile
1.
1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1 kV AEC-Q101 qualified
1.
3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.
4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -100 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ 4.
5
Max Unit -50 20 V V
-230 mA 7.
5 Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
BSS84AKM
50 V, 230 mA P-channel Trench MOSFET
2.
Pinning information
Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 3 2 Transparent top view G D
Simplified outline
Graphic symbol
SOT883 (SOT883)
sym146
S
3.
Ordering information
Table 3.
Ordering information Package Name BSS84AKM SOT883 Description leadless ultra small plastic package; 3 solder lands; body 1.
0 x 0.
6 x 0.
5 mm Version SOT883 Type number
4.
Marking
Table 4.
Marking codes Marking code[1] ZA Type number BSS84AKM
[1] % = placeholder for manufacturing site code
BSS84AKM
All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet
Rev.
1 — 23 May 2011
2 of 16
NXP Semiconductors
BSS84AKM
50 V, 230 mA P-channel Trench MOSFET
5.
Limiting values
Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain cu...
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