2SK1529
Description
2SK1529
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
High Power Amplifier Application
l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.
0 S (typ.
) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 −55~150 Unit V V A W °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE
Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range
Marking
Type
※ Lot Number Month (starting from alphabet A) Year (last number of the christian era)
JEDEC JEITA TOSHIBA
― ― 2-16C1B
K1529
※
Weight: 4.
6 g (typ.
)
Electrical Characteristics (Ta = 25°C)
Characteristics Drain cut−off current Gate leakage current Drain−source breakdown voltage Drain−source saturation voltage Gate−source cut−off voltage (Note 2) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Symbol IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss Test Condition VDS = 180 V, VGS = 0 VDS = 0, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 6 A, VGS = 10 V VDS = 10 V, ID = 0.
1 A VDS = 10 V, ID = 3 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD ≈ 30 V, VGS = 0, f = 1 MHz Min — — 180 — 0.
8 — — — — Typ.
— — — 2.
5 — 4.
0 700 150 90 Max 1.
0 ±0.
5 — 5.
0 2.
8 — — — — pF Unit mA µA V V V S
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification 0: 0.
8~1.
6 Y: 1.
4~2.
8 This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02
2SK1529
2
2002-09-02
2SK1529
Switching Time Test Circuit
Waveforms
3
2002-09-02
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