2SD6849
Description
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector-...
Inchange Semiconductor
D6849 PDF File
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