Intelligent Power Devices (IPDs)
MIP0210SY
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
unit: mm
10.5±0.5 4.5±0.2
2.8±0.2 1.5±0.2
9.5±0.2 8.0±...
