2SC4507
Description
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4507
DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High speed switching performance APPLICATIONS ·For switching regulator and general purpose power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.
1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 5 40 150 -55~150 UNIT V V V A W
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datasheet4u.
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC4507
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustainig voltage
IC=100mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.
4A
0.
8
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.
4A
1.
2
V
ICBO
Collector cut-off current
VCB=450V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE-1
DC current gain
IC=0.
5A ; VCE=5V
25
65
hFE-2
DC current gain
IC=2A ; VCE=5V
20
2
www.
datasheet4u.
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4507
Fig.
2 Outline dimensions
3
...
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