N- & P-Channel Enhancement Mode Field Effect Transistor
Description
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P3004ND5G
TO-252-5 Halogen-Free & Lead-Free
PRODUCT SUMMARY
S2 G2
V(BR)DSS N-Channel P-Channel 40 -40
RDS(ON) 30mΩ 55mΩ
ID 12A -8.
8A
G1
D1/D2
D1 G2
D2
S1
S2
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2 1 1
SYMBOL VDS VGS
N-Channel P-Channel UNITS 40 ±20 12 8 50 19 20 3 2.
1 -55 to 150 275 °C -40 ±20 -8.
8 -5.
8 -50 -18 19 mJ W A V V
TC = 25 °C TC = 70 °C
ID IDM IAS
L = 0.
1mH TC = 25 °C TC = 70 °C
EAS PD Tj, Tstg TL
SYMBOL RJC RJA
TYPICAL
MAXIMUM 6 42
S1G1
UNITS °C / W °C / W
Pulse width limited by maximum junction temperature.
Duty cycle 1%
ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A N-Ch P-Ch N-Ch 40 -40 1.
7 2.
0 -2.
0 3.
0 -3.
0 V MIN TYP MAX UNIT
P-Ch -1.
7
REV 1.
0 1 Oct-21-2009
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P3004ND5G
TO-252-5 Halogen-Free & Lead-Free
VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V Zero Gate Voltage Drain Current IDSS
N-Ch P-Ch N-Ch P-Ch
±100 ±100 1 -1
nA
VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch VDS = -30V, VGS = 0V, TJ = 55 °C P-Ch
A 10 -10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 5V, ID = 6A
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
50 -50 39 76 26 47 18 10 50 99
A
Drain-Source Resistance1
On-State
VGS = -5V, ID = ...
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