P-Channel MOSFET - Fairchild Semiconductor
Description
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
March 2013
-60 V, -30 A, 26 mΩ
Description
P-Channel QFET® MOSFET
FQPF47P06 / FQPF47P06YDTU
Features
• -30 A, -60 V, RDS(on)=26 mΩ(Max.
) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ.
84 nC) • Low Crss (Typ.
320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
S
!
● ●
G!
▶ ▲
●
GD S
TO-220F
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF47P06 / FQPF47P06YDTU -60 -30 -21.
2 -120 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Unit V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
820 -30 6.
2 -7.
0 62 0.
41 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 2.
42 62.
5 Unit °C/W °C/W
©2001 Fairchild Semiconductor Corporation FQPF47P06 / FQPF47P06YDTU Rev.
C0
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fairchildsemi.
com
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FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
Elerical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Off Characteristi...
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