Standard Avalanche Sinterglass Diode
Description
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1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949588
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Models
Available
MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx.
858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
1N5627
1N5627-TR
1N5627
1N5627-TAP
TAPED UNITS 2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY 12 500 12 500
PARTS TABLE
PART 1N5624 1N5625 1N5626 1N5627
TYPE DIFFERENTIATION
VR = 200 V; IF(AV) = 3 A VR = 400 V; IF(AV) = 3 A VR = 600 V; IF(AV) = 3 A VR = 800 V; IF(AV) = 3 A
PACKAGE SOD-64 SOD-64 SOD-64 SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
1N5624
Reverse voltage = repetitive peak reverse voltage
See electrical characteristics
1N5625 1N5626
1N5627
Peak forward surge current Repetitive peak forward current
tp = 10 ms, half sine wave
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
tp = 20 μs, half sine wave, Tj = 175 °C
I(BR)R = 1 A, Tj = 175 °C
i2*t-rating
Junction and storage temperature range
SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM
IFSM IFRM IF(AV)
PR
VALUE 200 400 600 800 100 18 3
1000
ER i2*t Tj = Tstg
20
40 -55 to +175
UNIT V V V V A A A
W
mJ
A2*s °C
Rev.
1.
6, 22-Feb-18
1
Document Number: 86063
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com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com
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