N-CHANNEL MOSFET
Description
STD100N03L-1 STD100N03L
N-CHANNEL 30V - 0.
0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
General features
Type STD100N03L STD100N03L-1
■ ■ ■
Package
ID Pw
VDSSS 30 V 30 V
RDS(on)
<0.
0055 Ω 80 A(1) 110 W <0.
0055 Ω 80 A(1) 110 W
3 1
1 3 2
100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD
DPAK
IPAK
Description
This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility.
This new improved device has been specifically designed for Automotive application and DC-DC converters.
Internal schematic diagram
Applications
■ ■
HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER AUTOMOTIVE
Order codes
Sales Type STD100N03LT4 STD100N03L-1 Marking D100N03L D100N03L-1 Package DPAK IPAK Packaging TAPE & REEL TUBE
September 2005
Rev 2 1/14
www.
st.
com 14
Free Datasheet http://www.
Datasheet4U.
com
1 Electrical ratings
STD100N03L - STD100N03L-1
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter Drain-Source Voltage (VGS = 0) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Value 30 ± 20 80 70 320 110 0.
73 3.
9 -55 to 175 Unit V V A A A W W/°C V/ns °C
Symbol VDS VGS ID Note 1 ID IDM Note 2 PTOT
dv/dt Note 3 Peak Diode Recovery Voltage Slope Tj Tstg Operating Junction Temperature Storage Temperature
Table 2.
Rthj-case Rthj-amb Tl
Thermal Data
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose (for 10sec.
1.
6 mm from case) 1.
36 100 275 °C/W °C/W °C
Table 3.
Symbol IAV EAS
Avalanche characteristics
Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single pu...
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