SUM65N20-30 - Vishay Siliconix
Description
SUM65N20-30
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.
030 @ VGS = 10 V
D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A)
65 a
APPLICATIONS
D Automotive – 42-V EPS and ABS – DC/DC Conversion – Motor Drives D Isolated DC/DC converters – Primary-Side Switch – High Voltage Synchronous Rectifier
D
TO-263
G
G
D S S N-Channel MOSFET
Top View SUM65N20-30
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
200 "20 65a 37a 140 35 61 375c 3.
75 –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71702 S-04920—Rev.
A, 15-Oct-01 www.
vishay.
com PCB Mount (TO-263)d
Symbol
RthJA RthJC
Limit
40 0.
4
Unit
_C/W
1
Free Datasheet http://www.
Datasheet4U.
com
SUM65N20-30
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 120 0.
023 0.
03...
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