2SA1020
Description
2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
• • • Low Collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High-speed switching: tstg = 1.
0 µs (typ.
) Complementary to 2SC2655 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −2 900 150 −55 to 150 Unit V V V A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.
5 A VCE = −2 V, IC = −1.
5 A IC = −1 A, IB = −0.
05 A IC = −1 A, IB = −0.
05 A VCE = −2 V, IC = −0.
5 A VCB = −10 V, IE = 0, f = 1 MHz
Weight: 0.
36 g (typ.
)
Min ⎯ ⎯ −50 70 40 ⎯ ⎯ ⎯ ⎯ ⎯
Typ.
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 40 0.
1
Max −1.
0 −1.
0 ⎯ 240 ⎯ −0.
5 −1.
2 ⎯ ⎯ ⎯
Unit µA µA V
V V MHz pF
IB2 IB1
Output 30 Ω
⎯
1.
0
⎯
µs
VCC = −30 V ⎯ 0.
1 ⎯
Fall time
tf
−IB1 = IB2 = 0.
05 A DUTY CYCLE ≤ 1%
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
1
2004-07-07
Free Datasheet http://www.
Datasheet4U.
com
2SA1020
Marking
A1020
Part No.
(or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-07-07
Free Datasheet http://www.
Datasheet4U.
com
2SA1020
VCE – IC
−1.
0 Common emitter −1.
0
VCE – IC
Common emitter
VCE (V)
−0.
8
IB = −5 mA −10 −20 −40 −80
Ta = 25°C
VCE (V)
...
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