Power MOSFET
Description
PD -97090
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qgs2
1.
4nC
IRF6614PbF IRF6614TRPbF
RDS(on) Qoss
9.
5nC
RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.
7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
VDSS Qg
tot
VGS Qgd
6.
0nC
40V max ±20V max 5.
9mΩ@ 10V 7.
1mΩ@ 4.
5V
Qrr
5.
5nC
Vgs(th)
1.
8V
19nC
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT
ST
DirectFET ISOMETRIC
Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
20
Typical R DS (on) (mΩ)
Max.
40 ±20 12.
7 10.
1 55 102 22 10.
...
Similar Datasheet
