Power MOSFET
Description
AUTOMOTIVE GRADE
PD - 97586
Features
● ● ● ● ● ● ●
HEXFET® Power MOSFET
D
AUIRFR48Z
V(BR)DSS RDS(on) max.
ID (Silicon Limited) 55V 11mΩ 62A 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
G S
ID (Package Limited)
D S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D-Pak AUIRFR48Z
G D S
G
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
62 44 42 250 91 0.
61 ± 20 74 110 See Fig.
12a, 12b, 15, 16 -55 to + 175
Units
A
Power Dissipation Linear Derating Factor Gate-to-Source Voltage
W W/°C V mJ A mJ °C
Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche En...
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