Power MOSFET
Description
AUTOMOTIVE GRADE
AUIRFI4905
HEXFET® Power MOSFET
D
Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed an ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Base Part Number AUIRFI4905 Absolute Maximum Ratings TO-220 Full-Pak Package Type
VDSS RDS(on) max.
-55V 20m -39A
G S
ID (Silicon Limited)
D
D G
S
TO-220 Full-Pak G Gate D Drain S Source
Standard Pack Form Quantity Tube 50
Orderable Part Number AUIRFI4905
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM PD @TC (Bottom) = 25°C VGS EAS IAR EAR TJ TSTG Thermal Resistance Symbol RJC RJA Junction-to-Case Junction-to-Ambient Parameter Typ.
––– ––– Continuous Drain Current, VGS @ -10V (Silicon Limited) Continuous Drain Current, VGS @ -10V (Silicon Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-So...
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