N-Channel MOSFET
Description
SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,650V, RDS(on)(typ)=2.
5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L
Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Material Pb free Pb free Halogen free Pb free
Packing Tube Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.
,LTD
Http://www.
silan.
com.
cn
REV:1.
0
2011.
01.
18 Page 1 of 9
SVF4N65T/F(G)/M_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF4N65T
100 0.
80
Ratings SVF4N65F(G)
650 ±30 4.
0 2.
8 16 33 0.
26 202 -55～+150 -55～+150
SVF4N65M
77 0.
62
Unit
V V
A
A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
RθJC RθJA
SVF4N65T 1.
25 62.
5
Ratings SVF4N65F(G)
3.
79 120
SVF4N65M 1.
62 110
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static ...
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