2SC5171
Description
2SC5171
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5171
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
• •
High transition frequency: fT = 200 MHz (typ.
) Complementary to 2SA1930
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180 180 5 2 1 2.
0 20 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-10R1A
Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 1.
7 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1
2006-11-10
Free Datasheet http://www.
Datasheet4U.
com
2SC5171
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 180 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.
1 A VCE = 5 V, IC = 1 A IC = 1 A, IB = 0.
1 A VCE = 5 V, IC = 1 A VCE = 5 V, IC = 0.
3 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 180 100 50 ― ― ― ― Typ.
― ― ― ― ― 0.
16 0.
68 200 16 Max 5.
0 5.
0 ― 320 ― 1.
0 1.
5 ― ― V V MHz pF Unit μA μA V
Marking
C5171
Part No.
(or abbreviation code) Lot No.
A...
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