FJAF6806D
Description
FJAF6806D
FJAF6806D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.
) =0.
1µs • For Color TV TO-3PF 1 1.
Base 2.
Collector 3.
Emitter
Equivalent Circuit C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
50Ω typ.
E
Rating 1500 750 6 6 12 50 150 -55 ~ 150
Units V V V A A W °C °C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.
5A VCC=200V, IC=4A, RL=50Ω IB1=1.
0A, IB2= - 2.
0A 40 6 8 4 7 5 1.
5 2 3 0.
2 V V V µs µs Min Typ Max 1 10 200 Units mA µA mA V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.
5 Units °C/W
©2002 Fairchild Semiconductor Corporation
Rev.
A, July 2002
Free Datasheet http://www.
0PDF.
com
FJAF6806D
Typical Characteristics
8 100
7
VCE = 5V
IB = 2.
0A Ta = 25 C
o o
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
6
Ta = 125 C
5
IB = 0.
8A
4
IB = 0.
6A IB = 0.
4A IB = 0.
2A
10
Ta = - 25 C
o
3
2
1
0 0 2 4 6 8 10
1 0.
1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1.
Static Characte...
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