KF60N06P
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switching mode power supplies.
FEATURES
VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.
2m (Max.
) @VGS = 10V Qg(typ.
) = 48nC
D N N A
KF60N06P
N CHANNEL MOS FIELD EFFECT TRANSISTOR
O C F
E
G B Q
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E
I K M L J H P
F G H I J K L M N O
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 +
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25¡ Drain Current @TC=100¡ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25¡ Derate above 25¡ Tj Tstg VDSS VGSS
Unless otherwise noted)
RATING 60 ¡¾ 20 60 37 230 430 13.
5 4.
5 113 0.
90 150 ¡ ¡ -55¡› 150 mJ mJ V/ns W W/¡ A UNIT V V
1
2
3
SYMBOL
1.
GATE 2.
DRAIN 3.
SOURCE
P Q
TO-220AB
I D* IDP EAS EAR dv/dt PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RthJC RthJA
1.
1 ¡ ¡ 62.
5
/W /W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2009.
12.
21
Revision No : 0
1/6
Free Datasheet http://www.
0PDF.
com
KF60N06P
ELECTRICAL CHARACTERISTICS (Tc=25¡
CHARACTERISTIC
)
SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance ¥˜ BVDSS BVDSS/¥˜ IDSS Vth IGSS RDS(ON) Tj ID=250¥ A,...
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