Power MOSFET
Description
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single
D
FEATURES
Low Figure-of-Merit Ron x Qg
0.38
100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC
TO-247AC
G S D G S N-Channel...
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